Masahara, M. : rechercher sur Z-Library

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1

Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

Yongxun Liu, Kijima, S., Sugimata, E., Masahara, M., Endo, K., Matsukawa, T., Ishii, K., Sakamoto, K., Sekigawa, T., Yamauchi, H., Takanashi, Y., Suzuki, E.

Journal:

IEEE Transactions on Nanotechnology

Année:

2006

Langue:

english

Fichier:

PDF, 1.81 MB

english, 2006

2

[IEEE 2010 Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2010.06.13-2010.06.14)] 2010 Silicon Nanoelectronics Workshop - Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET

Hayashida, T., Endo, K., Liu, Y. X., Kamei, T., Matsukawa, T., Ouchi, S., Sakamoto, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., Masahara, M.

Année:

2010

Langue:

english

Fichier:

PDF, 261 KB

english, 2010

3

[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance

Endo, Kazuhiko, Ishikawa, Yuki, Matsukawa, Takashi, Liu, Yongxum, Oruchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

Année:

2011

Langue:

english

Fichier:

PDF, 467 KB

english, 2011

4

Demonstration, analysis, and device design considerations for independent DG MOSFETs

Masahara, M., Yongxun Liu, Sakamoto, K., Endo, K., Matsukawa, T., Ishii, K., Sekigawa, T., Yamauchi, H., Tanoue, H., Kanemaru, S., Koike, H., Suzuki, E.

Journal:

IEEE Transactions on Electron Devices

Année:

2005

Langue:

english

Fichier:

PDF, 1.24 MB

english, 2005

5

Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition

Kazuhiko Endo, Yuki Ishikawa, Takashi Matsukawa, Yongxum Liu, Shin-ichi O’uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2012

6

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - Enhancing noise margins of FinFET SRAM by integrating Vth-controllable flexible-pass-gates

Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Liu, Yongxum, Matsukawa, Takashi, Masahara, Meishoku, Sakamoto, Kunihiro, Tsukada, Junichi, Ishii, Kenichi, Yamauchi, Hiromi, Suzuki, Eiichi

Année:

2008

Langue:

english

Fichier:

PDF, 903 KB

english, 2008

7

Experimental Demonstration of Ultrashort-Channel (3 nm) Junctionless FETs Utilizing Atomically Sharp V-Grooves on SOI

Migita, Shinji, Morita, Yukinori, Matsukawa, Takashi, Masahara, Meishoku, Ota, Hiroyuki

Journal:

IEEE Transactions on Nanotechnology

Année:

2014

Langue:

english

Fichier:

PDF, 787 KB

english, 2014

8

Static noise margin enhancement by flex-pass-gate SRAM

Shin-Ichi O'uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yungxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

Journal:

Electronics and Communications in Japan

Année:

2011

Langue:

english

Fichier:

PDF, 1.15 MB

english, 2011

9

Independent double-gate FinFETs with asymmetric gate stacks

M. Masahara, R. Surdeanu, L. Witters, G. Doornbos, V.H. Nguyen, G. Van den bosch, C. Vrancken, K. Devriendt, F. Neuilly, E. Kunnen, E. Suzuki, M. Jurczak, S. Biesemans

Journal:

Microelectronic Engineering

Année:

2007

Langue:

english

Fichier:

PDF, 1.66 MB

english, 2007

10

Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology

Shin-ichi O’uchi, Kazuhiko Endo, Meishoku Masahara, Kunihiro Sakamoto, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

Journal:

Solid-State Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 801 KB

english, 2008

11

Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi O’uchi, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishii, Kunihiro Sakamoto, Eiichi Suzuki, Meishoku Masahara

Journal:

Solid-State Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 833 KB

english, 2009

12

Design of SOI FinFET on 32 nm technology node for low standby power (LSTP) operation considering gate-induced drain leakage (GIDL)

Seongjae Cho, Jung Hoon Lee, Shinichi O’uchi, Kazuhiko Endo, Meishoku Masahara, Byung-Gook Park

Journal:

Solid-State Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 1.17 MB

english, 2010

13

Variability Origins of Parasitic Resistance in FinFETs With Silicided Source/Drain

Matsukawa, T., Yongxun Liu, Endo, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., O'uchi, S., Sakamoto, K., Masahara, M.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 344 KB

english, 2012

14

Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

Endo, K., Shuichi Noda, Masahara, M., Kubota, T., Ozaki, T., Samukawa, S., Yongxun Liu, Ishii, K., Ishikawa, Y., Sugimata, E., Matsukawa, T., Takashima, H., Yamauchi, H., Suzuki, E.

Journal:

IEEE Transactions on Electron Devices

Année:

2006

Langue:

english

Fichier:

PDF, 706 KB

english, 2006

15

Independent-Double-Gate FinFET SRAM for Leakage Current Reduction

Endo, K., O'uchi, S.-I., Ishikawa, Y., Liu, Y., Matsukawa, T., Sakamoto, K., Masahara, M., Tsukada, J., Ishii, K., Yamauchi, H., Suzuki, E.

Journal:

IEEE Electron Device Letters

Année:

2009

Langue:

english

Fichier:

PDF, 230 KB

english, 2009

16

[IEEE Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Hsin Chu, Taiwan (2010.04.26-2010.04.28)] Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Variability analysis of TiN FinFET SRAM cell performance and its compensation using Vth-controllable independent double-gate FinFET

Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Liu, Yongxun, Matsukawa, Takashi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

Année:

2010

Langue:

english

Fichier:

PDF, 990 KB

english, 2010

17

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

Matsukawa, Takashi, Endo, Kazuhiko, Liu, Yongxun, O'uchi, Shin-ichi, Masahara, Meishoku, Ishikawa, Yuki, Yamauchi, Hiromi, Tsukada, Junichi, Ishii, Ken-ichi, Sakamoto, Kunihiro, Suzuki, Eiichi

Année:

2008

Langue:

english

Fichier:

PDF, 1.73 MB

english, 2008

18

Two-step annealing effects on ultrathin EOT higher-k (k=40) ALD-HfO2 gate stacks

Morita, Yukinori, Migita, Shinji, Mizubayashi, Wataru, Masahara, Meishoku, Ota, Hiroyuki

Journal:

Solid-State Electronics

Année:

2013

Langue:

english

Fichier:

PDF, 974 KB

english, 2013

19

[IEEE 2007 IEEE International Conference on Integrated Circuit Design and Technology - Austin, TX, USA (2007.05.30-2007.06.1)] 2007 IEEE International Conference on Integrated Circuit Design and Technology - Four-Terminal FinFET Device Technology

Masahara, M., Endo, K., Liu, Y.X., O'uchi, S., Matsukawa, T., Surdeanu, R., Witters, L., Doornbos, G., Nguyen, V. H., Van den bosch, G., Vrancken, C., Jurczak, M., Biesemans, S., Suzuki, E.

Année:

2007

Langue:

english

Fichier:

PDF, 5.45 MB

english, 2007

20

[IEEE 2010 IEEE Custom Integrated Circuits Conference -CICC 2010 - San Jose, CA, USA (2010.09.19-2010.09.22)] IEEE Custom Integrated Circuits Conference 2010 - Realization of 0.7-V analog circuits by adaptive-Vt operation of FinFET

O'uchi, S., Endo, K., Liu, Y.X., Nakagawa, T., Matsukawa, T., Ishikawa, Y., Tsukada, J., Sekigawa, T., Koike, H., Sakamoto, K., Masahara, M.

Année:

2010

Langue:

english

Fichier:

PDF, 679 KB

english, 2010

21

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Electrical performances of junctionless-FETs at the scaling limit (LCH = 3 nm)

Migita, Shinji, Morita, Yukinori, Masahara, Meishoku, Ota, Hiroyuki

Année:

2012

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2012

22

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

Morita, Yukinori, Mori, Takahiro, Migita, Shinji, Mizubayashi, Wataru, Tanabe, Akihito, Fukuda, Koichi, Matsukawa, Takashi, Endo, Kazuhiko, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Ota, Hi

Journal:

Solid-State Electronics

Année:

2014

Langue:

english

Fichier:

PDF, 886 KB

english, 2014

23

[IEEE 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2014.4.28-2014.4.30)] Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates

Matsukawa, T., Fukuda, K., Liu, Y.X., Endo, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., O'uchi, S., Migita, S., Mizubayashi, W., Morita, Y., Ota, H., Masahara, M.

Année:

2014

Langue:

english

Fichier:

PDF, 1.35 MB

english, 2014

24

[IEEE 2008 IEEE International SOI Conference - New Paltz, NY (2008.10.6-2008.10.9)] 2008 IEEE International SOI Conference - Impact of extension and source/drain resistance on FinFET performance

Matsukawa, T., Endo, K., Ishikawa, Y., Yamauchi, H., Liu, Y.X., O'uchi, S., Tsukada, J., Ishii, K., Sakamoto, K., Suzuki, E., Masahara, M.

Année:

2008

Langue:

english

Fichier:

PDF, 190 KB

english, 2008

25

[IEEE 2004 International Conference on Integrated Circuit Design and Technology - Austin, TX, USA (17-20 May 2004)] 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) - Flexible threshold voltage 4-terminal FinFETs

Yongxun Liu,, Masahara, M., Ishii, K., Suzuki, E.

Année:

2004

Langue:

english

Fichier:

PDF, 380 KB

english, 2004

26

[IEEE 2008 IEEE International SOI Conference - New Paltz, NY (2008.10.6-2008.10.9)] 2008 IEEE International SOI Conference - Logic gate threshold voltage controllable single metal gate FinFET CMOS inverters implemented by using co-integration of 3T/4T-FinFETs

Liu, Y. X., Sekigawa, T., Hayashida, T., Matsukawa, T., Endo, K., O'uchi, S., Sakamoto, K., Ishii, K., Tsukada, T., Ishikawa, Y., Yamauchi, H., Ogura, A., Koike, H., Suzuki, E., Masahara, M.

Année:

2008

Langue:

english

Fichier:

PDF, 561 KB

english, 2008

27

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

Yongxun Liu,, Tetsuro Hayashida,, Takashi Matsukawa,, Kazuhiko Endo,, Meishoku Masahara,, Shin-ichi O'uchi,, Kunihoro Sakamoto,, Kenichi Ishii,, Junichi Tsukada,, Yuki Ishikawa,, Hiromi Yama

Année:

2007

Langue:

english

Fichier:

PDF, 1012 KB

english, 2007

28

Fabrication and Demonstration of 3-nm-Channel-Length Junctionless Field-Effect Transistors on Silicon-on-Insulator Substrates Using Anisotropic Wet Etching and Lateral Diffusion of Dopants

Migita, Shinji, Morita, Yukinori, Masahara, Meishoku, Ota, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 976 KB

english, 2013

29

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Advanced FinFET CMOS Technology: TiN-Gate, Fin-Height Control and Asymmetric Gate Insulator Thickness 4T-FinFETs

Liu, Yongxun, Matsukawa, Takashi, Endo, Kazuhiko, Masahara, Meishoku, Ishii, Kenichi, O'uchi, Shin-ichi, Yamauchi, Hiromi, Tsukada, Junichi, Ishikawa, Yuki, Suzuki, Eiichi

Année:

2006

Langue:

english

Fichier:

PDF, 3.46 MB

english, 2006

30

Highly Vt tunable and low variability triangular fin-channel MOSFETs on SOTB

Liu, Y.X., Matsukawa, T., Endo, K., O’uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Masahara, M.

Journal:

Microelectronic Engineering

Année:

2015

Langue:

english

Fichier:

PDF, 1.44 MB

english, 2015

31

Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation

Mori, Takahiro, Yasuda, Tetsuji, Maeda, Tatsuro, Mizubayashi, Wataru, O'uchi, Shin-ichi, Liu, Yongxun, Sakamoto, Kunihiro, Masahara, Meishoku, Ota, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 1.75 MB

english, 2011

32

Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography

Liu, Yongxun, Ishii, Kenichi, Tsutsumi, Toshiyuki, Masahara, Meishoku, Takashima, Hidenori, Suzuki, Eiichi

Journal:

Japanese Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2003

33

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - (Invited) Advanced FinFET Technologies: Extension Doping, V

Liu, Yongxun, Endo, Kazuhiko, O'uchi, Shinichi, Matsukawa, Takashi, Sakamoto, Kunihiro, Masahara, Meishoku

Année:

2010

Langue:

english

Fichier:

PDF, 4.68 MB

english, 2010

34

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

Kojima, Kazutoshi, Ohno, Takaya, Senzaki, Junji, Fukuda, Kenji, Fujimoto, Tatsuo, Katsuno, Masakazu, Ohtani, Noboru, Nishio, Johji, Masahara, Koh, Ishida, Yuuki, Takahashi, Tetsuo, Suzuki, Takaya, Tan

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 408 KB

2002

35

Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors

Mizubayashi, W., Fukuda, K., Mori, T., Endo, K., Liu, Y.X., Matsukawa, T., O’uchi, S., Ishikawa, Y., Migita, S., Morita, Y., Tanabe, A., Tsukada, J., Yamauchi, H., Masahara, M., Ota, H.

Journal:

Solid-State Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 853 KB

english, 2015

36

Fabrication of Adenosine Triphosphate-Molecule Recognition Chip by Means of Bioluminous Enzyme Luciferase

Tanii, Takashi, Goto, Tomomi, Iida, Tomoyuki, Koh-Masahara, Meishoku, Ohdomari, Iwao

Journal:

Japanese Journal of Applied Physics

Année:

2001

Langue:

english

Fichier:

PDF, 442 KB

english, 2001

37

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Morita, Yukinori, Mori, Takahiro, Migita, Shinji, Mizubayashi, Wataru, Fukuda, Koichi, Matsukawa, Takashi, Endo, Kazuhiko, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Ota, Hiroyuki

Journal:

Solid-State Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 1.88 MB

english, 2015

38

[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Robust and compact key generator using physically unclonable function based on logic-transistor-compatible poly-crystalline-Si channel FinFET technology

O'uchi, Shin-ichi, Liu, Yongxun, Hori, Yohei, Irisawa, Toshifumi, Fuketa, Hiroshi, Morita, Yukinori, Migita, Shinji, Mori, Takahiro, Nakagawa, Tadashi, Tsukada, Junichi, Koike, Hanpei, Masahara, Meish

Année:

2015

Langue:

english

Fichier:

PDF, 976 KB

english, 2015

39

(Invited) Variability in FinFET SRAM Cells

Endo, K., O'uchi, S., Matsukawa, T., Liu, Y., Masahara, M.

Journal:

ECS Transactions

Année:

2015

Langue:

english

Fichier:

PDF, 248 KB

english, 2015

40

Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

Endo, Kazuhiko, Migita, Shinji, Ishikawa, Yuki, Matsukawa, Takashi, O'uchi, Shin-ichi, Tsukada, Junji, Mizubayashi, Wataru, Morita, Yukinori, Ota, Hiroyuki, Yamauchi, Hitomi, Masahara, Meishoku

Journal:

Journal of Low Power Electronics and Applications

Année:

2014

Langue:

english

Fichier:

PDF, 859 KB

english, 2014

41

[IEEE 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2018.4.16-2018.4.19)] 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Damageless and conformai doping for FinFETs by spin-coated phosphorus doped silica

Matsukawa, Takashi, Mori, Takahiro, Sawada, Yoshihiro, Kinoshita, Yohei, Liu, Yongxun, Masahara, Meishoku

Année:

2018

Langue:

english

Fichier:

PDF, 593 KB

english, 2018

42

Vertical double-gate MOSFET device technology

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Eiichi Suzuki

Journal:

Electronics and Communications in Japan

Année:

2008

Langue:

english

Fichier:

PDF, 1.23 MB

english, 2008

43

Photostability of solid-state ubidecarenone at ordinary and elevated temperatures under exaggerated UV irradiation

Yoshihisa Matsuda, Reiko Masahara

Journal:

Journal of Pharmaceutical Sciences

Année:

1983

Langue:

english

Fichier:

PDF, 623 KB

english, 1983

44

Characterization of AlAs/GaAs ultrathin-layer superlattices grown by migration enhanced epitaxy at low temperatures

Mitsuaki Yano, Kazuhiko Yamamoto, Kou Masahara, Masataka Inoue

Journal:

Journal of Crystal Growth

Année:

1993

Langue:

english

Fichier:

PDF, 466 KB

english, 1993

45

A new technique to obtain grain size of sea bottom surface

Masahara Fukue, Shigeyasu Okusa, Takaaki Nakamura

Journal:

Journal of Terramechanics

Année:

1984

Langue:

english

Fichier:

PDF, 60 KB

english, 1984

46

Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions

T. Matsukawa, Y.X. Liu, M. Masahara, K. Ishii, K. Endo, H. Yamauchi, E. Sugimata, H. Takashima, T. Higashino, E. Suzuki, S. Kanemaru

Journal:

Microelectronic Engineering

Année:

2005

Langue:

english

Fichier:

PDF, 714 KB

english, 2005

47

Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

Y.X. Liu, E. Sugimata, M. Masahara, K. Endo, K. Ishii, T. Matsukawa, H. Takashima, H. Yamauchi, E. Suzuki

Journal:

Microelectronic Engineering

Année:

2005

Langue:

english

Fichier:

PDF, 330 KB

english, 2005

48

High-performance liquid chromatographic analysis of cis-trans stereoisomeric 3-dehydroretinals in the presence of retinal isomers

Kiyoshi Tsukida, Reiko Masahara, Masayoshi Ito

Journal:

Journal of Chromatography A

Année:

1980

Langue:

english

Fichier:

PDF, 307 KB

english, 1980

49

Synthesis of (2S)-β,β-caroten-2-OL

M. Ito, R. Masahara, K. Tsukida

Journal:

Tetrahedron Letters

Année:

1977

Langue:

english

Fichier:

PDF, 199 KB

english, 1977

50

Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs): technological challenges and future developments

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Eiichi Suzuki

Journal:

IEEJ Transactions on Electrical and Electronic Engineering

Année:

2009

Langue:

english

Fichier:

PDF, 840 KB

english, 2009